The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Oct. 20, 2025
Applicant:

Zinite Corporation, Edmonton, CA;

Inventors:

Ken Cadien, Edmonton, CA;

Joel Fleck, Edmonton, CA;

Kwanghyun Kim, Edmonton, CA;

Assignee:

Zinite Corporation, Edmonton, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/60 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/0314 (2025.01); H10D 30/6706 (2025.01); H10D 30/6731 (2025.01); H10D 30/6736 (2025.01); H10D 30/6757 (2025.01); H10D 62/60 (2025.01);
Abstract

An example thin-film transistor includes a source, a drain, a gate, and a body of channel material disposed within the influence of the gate between the source and the drain. The body of channel material includes a metal oxide. The body of channel material forms a carrier channel between the source and the drain when sufficient voltage is applied to the gate. The source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.


Find Patent Forward Citations

Cadien, Ken. (2026). Thin-film transistors with metal oxide channel interfaces (U.S. Patent No. 12615804). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615804

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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