The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Mar. 04, 2024
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventor:

Masashi Nogawa, Sachse, TX (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/013 (2006.01); H03K 17/60 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 3/013 (2013.01); H03K 17/60 (2013.01); H03K 17/687 (2013.01);
Abstract

Embodiments of a power switching system are disclosed. In some embodiments, the system includes: a power transistor having a control terminal, a first transistor terminal, and a second transistor terminal; a current buffer that includes a bipolar junction transistor connected across the control terminal and the first transistor terminal, the bipolar junction transistor having a base; a gate driver circuit having a first circuit branch connected to the base of the bipolar junction transistor and a second circuit branch connected to the base of the bipolar junction transistor, wherein: the first circuit branch includes a first switch for opening and closing the first circuit branch; the second circuit branch includes a second switch for opening and closing the second circuit branch and a current source. In some embodiments, the power transistor is a Silicon Carbide field effect transistor or a Gallium Nitride field effect transistor.


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