The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 03, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Rei Hashimoto, Edogawa, JP;
Hiroshi Ohno, Chuo, JP;
Shinji Saito, Yokohama, JP;
Tsutomu Kakuno, Fujisawa, JP;
Kei Kaneko, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A surface-emitting semiconductor light-emitting device includes a semiconductor substrate; a first semiconductor layer on a front surface of the semiconductor substrate, an active layer on the first semiconductor layer; a photonic crystal layer on the active layer, a second semiconductor layer on the photonic crystal layer, a first electrode on the second semiconductor layer; and a second electrode on a back surface of the semiconductor substrate. The photonic crystal layer includes a plurality of protrusions arranged along an upper surface of the active layer. The second electrode includes a planar contact portion contacting the back surface of the semiconductor substrate, and at least one fine wire contact portion extending into a surface-emitting region in the back surface of the semiconductor substrate. The light radiated from the active layer is externally emitted from the surface-emitting region. The fine wire contact portion is arranged in the surface-emitting region with rotationally asymmetric.