Programming complementary data non-volatile memory device and method

Abstract

A non-volatile memory device includes a memory cell which stores one of first data and second data, and includes a first sub-memory cell connected to a first word line and a first bit line, and a second sub-memory cell connected to a second word line and a second bit line, a source line shared by the first sub-memory cell and the second sub-memory cell, and a sense amplifier connected to the first bit line and the second bit line which reads data stored in the memory cell. The sense amplifier receives a first current from the first bit line, receives a second current from the second bit line, and reads data stored in the memory cell by comparing magnitudes of the first current and the second current. The first sub-memory cell is programmed, and the second sub-memory cell is erased, in response to the memory cell storing the first data.