The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jan. 09, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Siyeon Cho, Suwon-si, KR;

Daewon Ha, Suwon-si, KR;

Myunghun Woo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2275 (2013.01); G11C 11/223 (2013.01); G11C 11/2277 (2013.01);
Abstract

A method of operating a nonvolatile memory device includes applying a ground voltage to a selected wordline among the wordlines, applying an erase pass voltage to at least one unselected wordline among the wordlines, applying an erase voltage to a selected bitline among the bitlines, applying an erase prohibition voltage to an unselected bitline among the bitlines, and applying a Gate Induced Drain Leakage (GIDL) voltage to at least one string selection line corresponding to a string selected from among the plurality of strings.


Find Patent Forward Citations

Quick Actions:

Cho, Siyeon. (2026). Nonvolatile memory device, storage device having the same, and operating method thereof (U.S. Patent No. 12614577). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12614577

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…