The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Apr. 27, 2023
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Hehe Hu, Beijing, CN;

Hui Guo, Beijing, CN;

Jiayu He, Beijing, CN;

Ce Ning, Beijing, CN;

Zhengliang Li, Beijing, CN;

Kun Zhao, Beijing, CN;

Nianqi Yao, Beijing, CN;

Jie Huang, Beijing, CN;

Feifei Li, Beijing, CN;

Fengjuan Liu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01);
U.S. Cl.
CPC ...
G09G 3/20 (2013.01); G09G 2300/04 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0286 (2013.01);
Abstract

A driving circuit and a display device are provided. The driving circuit includes a pull-up node noise reduction circuit, an input circuit, a first output noise reduction circuit and a pull-down node noise reduction circuit; at least one transistor included in the driving circuit is a floating processing transistor including a floating electrode, a gate electrode, a first electrode and a second electrode; the floating electrode is arranged on the same layer with at least one of the first electrodes and the second electrode of the floating processing transistor; the floating electrode is arranged between the first electrode and the second electrode of the floating processing transistor, and the floating electrode has no electric signal input; a shortest distance between the first electrode of the floating processing transistor and the second electrode of the floating processing transistor is greater than an initial distance.


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