The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jun. 01, 2023
Applicant:

Qatar Foundation for Education, Science and Community Development, Doha, QA;

Inventor:

Bo Wang, Doha, QA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/30 (2006.01); G01K 7/01 (2006.01); H03M 1/10 (2006.01); H03M 1/12 (2006.01);
U.S. Cl.
CPC ...
G01K 7/015 (2013.01); H03M 1/1014 (2013.01); H03M 1/1245 (2013.01); G05F 3/30 (2013.01);
Abstract

A complementary metal-oxide-semiconductor (CMOS) temperature sensor with wide-range sensing capability and high energy-efficiency is provided by a device, having: a bipolar junction transistor (BJT) core; an Analog to Digital Converter (ADC); a digital controller; and an amplifier configured to receive a selection signal from the digital controller to provide a voltage differential from the BJT core to the ADC at one of a first gain or a second gain, different from the first gain based on a temperature sensed by the BJT core. Additionally, a method of operation thereof is provided that includes: calibrating first and second gains associated with respective first and second temperature ranges for a temperature sensor at a shared temperature; determining whether a reading temperature for the temperature sensor is within the first or second temperature range; and applying one gain based on which temperature range the reading temperature is within.


Find Patent Forward Citations

Wang, Bo. (2026). Complementary metal-oxide-semiconductor temperature sensor with wide-range sensing capability and high energy-efficiency (U.S. Patent No. 12613142). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12613142

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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