The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 14, 2022
Applicant:
Peking University, Beijing, CN;
Inventors:
Assignee:
PEKING UNIVERSITY, Beijing, CN;
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 25/16 (2006.01); C30B 25/22 (2006.01); C30B 29/02 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); C30B 33/06 (2006.01); C30B 33/10 (2006.01);
U.S. Cl.
CPC ...
C30B 25/18 (2013.01); C30B 25/165 (2013.01); C30B 25/22 (2013.01); C30B 29/02 (2013.01); C30B 29/403 (2013.01); C30B 29/68 (2013.01); C30B 33/06 (2013.01); C30B 33/10 (2013.01);
Abstract
A method for preparing a large-scale two-dimensional single crystal material stack which has an interlayer rotation angle. Single crystal substrates are stacked and rotated at a specific angle, a two-dimensional single crystal material is epitaxial on the surface thereof, and then an upper layer and a lower layer of the two-dimensional single crystal material are attached, and a layer of the single crystal substrates on the surface is removed so as to obtain a two-dimensional single crystal stack which has a specific rotation angle. A large-scale two-dimensional single crystal material stack which has an interlayer rotation angle prepared by the described method.