The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Nov. 07, 2022
Applicant:

Ngk Insulators, Ltd., Nagoya City, JP;

Inventors:

Katsuya Shimizu, Kasugai City, JP;

Koh Kobayashi, Nagoya City, JP;

Kenichi Noda, Nagoya City, JP;

Makiko Ichikawa, Nagoya City, JP;

Naoto Kinoshita, Nagoya City, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 53/22 (2006.01); B01D 67/00 (2006.01); B01D 69/10 (2006.01); B01D 69/12 (2006.01); B01D 71/02 (2006.01);
U.S. Cl.
CPC ...
B01D 71/0281 (2022.08); B01D 53/228 (2013.01); B01D 67/0051 (2013.01); B01D 69/105 (2013.01); B01D 69/106 (2022.08); B01D 69/108 (2022.08); B01D 69/1213 (2022.08); B01D 71/0215 (2022.08);
Abstract

A separation membrane complex includes a porous support and a separation membrane formed on the support. The separation membrane has a small void. A small void index Iexpressed by (Σ(S))/(S) and indicating the abundance ratio of small voids is higher than or equal to 10×10, and a large void index Iexpressed by (Σ(S))/(S) and indicating the abundance ratio of large voids is lower than 200×10, where Sis the surface area of the separation membrane, Sis the area per small void, and Sis the area per large void. Accordingly, the separation membrane complex can achieve a high separation ratio.


Find Patent Forward Citations

Loading…