The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Feb. 08, 2021
Hitachi, Ltd., Tokyo, JP;
Haruka Shimizu, Tokyo, JP;
Hiromi Shimazu, Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
An accelerated test for applying a high voltage is performed without reducing a manufacturing yield of a semiconductor device using a wide gap semiconductor material. The technical idea in the embodiment is, for example, an idea of performing the accelerated test in the state of a semiconductor wafer to distinguish a latent defect as illustrated in FIG. That is, the technical idea in the embodiment is to perform the accelerated test on a semiconductor chip containing a wide bandgap semiconductor material as a main component not in the state of a semiconductor chip but in the state of the semiconductor wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile