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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12610772 B1

PDFFull Text
Date of Patent:
Apr. 21, 2026

Filed:

Aug. 30, 2023

Substrate processing apparatus, substrate processing method and method of fabricating semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woo Rim Lee, Suwon-si, KR;

Myoung Jae Seo, Suwon-si, KR;

Sung Gil Kang, Suwon-si, KR;

Hyun Ho Doh, Suwon-si, KR;

Sung Yong Park, Suwon-si, KR;

In Hye Jeong, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); H10P 14/43 (2026.01); H10P 50/24 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0421 (2026.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H10P 14/432 (2026.01); H10P 50/242 (2026.01); H01J 2237/334 (2013.01);
Abstract

A method of fabricating a semiconductor device is provided. The method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. The processing the substrate includes: providing a process gas; generating a process etchant from the process gas, using plasma ignition, the process etchant including a first etchant and a second etchant; processing the substrate, using the process etchant; identifying a composition rate of the process etchant; and controlling the processing of the substrate based on a process result according to the composition rate of the process etchant.

Find Patent Forward Citations

Lee, Woo. (2026). Substrate processing apparatus, substrate processing method and method of fabricating semiconductor device (U.S. Patent No. 12610772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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