The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Nov. 24, 2020
Applicant:

Aita Bio Inc., New York, NY (US);

Inventors:

Jacob Menture, New York, NY (US);

Peter Smeys, San Jose, CA (US);

Dilan Casanovas Mack, New York, NY (US);

Laurence Heads, New York, NY (US);

Assignee:

AITA BIO INC., New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/20 (2023.01); H10N 30/082 (2023.01); H10N 30/09 (2023.01);
U.S. Cl.
CPC ...
H10N 30/2047 (2023.02); H10N 30/082 (2023.02); H10N 30/09 (2023.02);
Abstract

A method is disclosed of fabricating a MEMS device that includes one or more wafers configured as pump or valve. The pump or valve includes an inlet port to receive fluid and an outlet port to release the fluid within the pump or valve. The method comprises growing silicon dioxide on a silicon layer of the one or more wafers to form a silicon dioxide layer on the silicon layer, depositing silicon nitride on the silicon dioxide layer of the one or more wafers to form a silicon nitride layer on the silicon dioxide layer, spinning a front side to create a pattern thereon defining an area for the pump or valve, dry etching the one or more wafers at the area for the pump or valve to remove the silicon dioxide and silicon nitride layers to define an opening for the pump or valve.


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