Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device includes a translucent substrate, a row of light-emitting elements on the substrate, an insulating layer, and first and second electrode pads. Each light-emitting element includes a first semiconductor layer of a first conductivity type formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer of opposite conductivity type formed on the light-emitting layer, a first electrode on the first semiconductor layer, and a second electrode on the second semiconductor layer. The insulating layer covers the light-emitting elements so as to form a first opening and a second opening. The first opening exposes the first electrode of the light-emitting element in one end side of the row of light-emitting elements. The second opening exposes the second electrode of the light-emitting element in another end side of the row of light-emitting elements. The first electrode pad covers the first opening and is formed from the first opening over one region on the insulating layer, and is electrically connected to the first electrode. The second electrode pad covers the second opening and is formed from the second opening over another region spaced from the one region on the insulating layer, and is electrically connected to the second electrode.