The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Aug. 03, 2022
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Aleksandr Vaskin, Eindhoven, NL;

Mohamed S. Abdelkhalik, Eindhoven, NL;

Debapriya Pal, Amsterdam, NL;

Jaime Gomez Rivas, Eindhoven, NL;

Albert Femius Koenderink, Amsterdam, NL;

Toni Lopez, Aachen, DE;

Aimi Abass, Aachen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 27/15 (2006.01); H10H 20/01 (2025.01); H10H 20/814 (2025.01); H10H 20/84 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/814 (2025.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/857 (2025.01); H10H 20/0364 (2025.01);
Abstract

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λto propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.


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