The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Oct. 16, 2023
Applicant:
First Solar, Inc., Tempe, AZ (US);
Inventors:
Sachit Grover, Campbell, CA (US);
Stuart Irvine, St. Asaph, GB;
Xiaoping Li, Santa Clara, CA (US);
Roger Malik, Santa Clara, CA (US);
Shahram Seyedmohammadi, Trabuco Canyon, CA (US);
Gang Xiong, Santa Clara, CA (US);
Wei Zhang, San Jose, CA (US);
Assignee:
First Solar, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/123 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 77/1233 (2025.01); H10F 71/125 (2025.01); H10F 71/128 (2025.01);
Abstract
Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
Grover, Sachit. (2026). Doped photovoltaic semiconductor layers and methods of making (U.S. Patent No. 12610650). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610650
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile