The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Oct. 16, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yutaro Komuro, Nagasaki, JP;

Yoshiki Ebiko, Kanagawa, JP;

Tomoharu Ogita, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); G01S 7/481 (2006.01); G01S 7/4863 (2020.01); G01S 17/894 (2020.01); G02B 1/118 (2015.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01); H10F 77/30 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8067 (2025.01); G01S 7/4816 (2013.01); G01S 7/4863 (2013.01); G01S 17/894 (2020.01); H10F 39/8057 (2025.01); H10F 39/807 (2025.01); H10F 77/331 (2025.01); H10F 77/334 (2025.01); H10F 77/413 (2025.01); G02B 1/118 (2013.01); H10F 39/184 (2025.01); H10F 39/199 (2025.01); H10F 39/8037 (2025.01);
Abstract

The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. The light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer which is disposed between the on-chip lens and the wiring layer and includes a photodiode. The wiring layer includes a reflection film which is disposed such that at least a portion thereof overlaps the photodiode when seen in a plan view, and a transfer transistor which reads charge generated by the photodiode, and the reflection film is formed of a material different from that of a metal wiring electrically connected to a gate of the transfer transistor. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.


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