The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Nov. 21, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungwook Lim, Hwaseong-si, KR;

Seojoo Kim, Suwon-si, KR;

Soeun Park, Suwon-si, KR;

Sunghyuck Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8023 (2025.01); H10F 39/182 (2025.01); H10F 39/8037 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01);
Abstract

An image sensor is provided. The image sensor includes: a first photodiode (PD) provided in a first area; a second PD provided in a second area, wherein the second area is smaller than and adjacent to the first area; a first floating diffusion region that is provided in the first area and connected to the first PD via a first transfer transistor; a second floating diffusion region that is connected to a power source via a first reset transistor and the first floating diffusion region via a second reset transistor; a third floating diffusion region that is provided in the second area, and is connected to the second PD via the second transfer transistor and the second floating diffusion region via a first switch; and a capacitor connected between the third floating diffusion region and the power source.


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