The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Mar. 29, 2023
Applicant:
Japan Display Inc., Tokyo, JP;
Inventors:
Hajime Watakabe, Tokyo, JP;
Masashi Tsubuku, Tokyo, JP;
Toshinari Sasaki, Tokyo, JP;
Takaya Tamaru, Tokyo, JP;
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/385 (2006.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 99/00 (2025.01); H01L 21/385 (2013.01); H10D 30/6755 (2025.01); H10D 64/01 (2025.01); H10D 30/673 (2025.01); H10D 30/6757 (2025.01);
Abstract
A method for manufacturing semiconductor device according to an embodiment includes; forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the metal oxide layer is formed above the gate insulating layer; removing the metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.