The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Dec. 08, 2020
Applicant:
Sharp Kabushiki Kaisha, Sakai City, JP;
Inventor:
Tadayoshi Miyamoto, Sakai City, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai City, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/40 (2025.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01); H10K 59/80 (2023.01); H10K 71/60 (2023.01);
U.S. Cl.
CPC ...
H10D 86/423 (2025.01); H10K 59/1201 (2023.02); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10K 59/871 (2023.02); H10K 59/8792 (2023.02); H10K 71/60 (2023.02); H10K 59/873 (2023.02);
Abstract
A first TFT includes a first semiconductor layer formed of polysilicon, a gate insulating film provided on the first semiconductor layer, a third semiconductor layer provided on the gate insulating film, and a first gate electrode provided on the third semiconductor layer, and a second TFT includes a second semiconductor layer formed of an oxide semiconductor, a first metal layer and a second metal layer formed on a third conductor region and a fourth conductor region, respectively, of the second semiconductor layer.