The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Mar. 09, 2023
Applicants:
Niko Semiconductor Co., Ltd., New Taipei City, TW;
Super Group Semiconductor Co., Ltd., Hsinchu County, TW;
Inventors:
Sung-Nien Tang, Hsinchu County, TW;
Ho-Tai Chen, Hsinchu County, TW;
Hsiu-Wen Hsu, Hsinchu County, TW;
Assignees:
NIKO SEMICONDUCTOR CO., LTD., New Taipei City, TW;
SUPER GROUP SEMICONDUCTOR CO., LTD., Hsinchu County, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/23 (2025.01); H10D 84/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/146 (2025.01); H01L 21/02236 (2013.01); H01L 21/046 (2013.01); H10D 12/031 (2025.01); H10D 30/668 (2025.01); H10D 62/109 (2025.01); H10D 62/8325 (2025.01); H10D 64/252 (2025.01);
Abstract
A power device and a method for manufacturing the power device are provided. The power device includes an electrical substrate, an epitaxial layer, a well region, a plurality of doping regions, a plurality of trenches, a first oxidation layer, a second oxidation layer, a polycrystalline silicon filler, two shielding regions, a dielectric layer, and a metallic electrically conductive layer.