The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Feb. 22, 2023
Infineon Technologies Canada Inc., Ottawa, CA;
Marco A. Zuniga, Berkeley, CA (US);
Thomas William Macelwee, Nepean, CA;
Rohan Samsi, Milpitas, CA (US);
Lucas Andrew Milner, Sunnyvale, CA (US);
Vineet Unni, Kanata, CA;
Jayasimha S. Prasad, Upland, CA (US);
Ashutosh Ravindra Joharapurkar, Bangalore, IN;
Ramesh G. Karpur, Bangalore, IN;
Infineon Technologies Canada Inc., Ottawa, CA;
Abstract
The biasing of one or more field plates of a high electron mobility transistor (a HEMT) with a non-zero voltage to thereby affect the electric field profile of the HEMT. The non-zero voltage may be a constant DC voltage, or perhaps may be a voltage that changes over time. The use of a non-zero voltage allows for greater ability to regulate and reduce the electric field occurring in the semiconductor channel region, especially at the field plate. Further, when the electric field occurring at the field plate is reduced, the overall size of the HEMT can also be reduced as compared to applying a zero voltage to the field plate. Alternatively, or in addition, applying a non-zero voltage to the field plate allows the voltage levels handled by the HEMT to be increased as compared to simply grounding the field plate.