The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Sep. 29, 2021
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Haidong Su, Beijing, CN;
Feng Li, Beijing, CN;
Yezhou Fang, Beijing, CN;
Lei Yao, Beijing, CN;
Lei Yan, Beijing, CN;
Chenglong Wang, Beijing, CN;
Kai Li, Beijing, CN;
Xiaogang Zhu, Beijing, CN;
Hua Yang, Beijing, CN;
Lin Hou, Beijing, CN;
Yun Gao, Beijing, CN;
ORDOS YUANSHEND OPTOELECTRONICS CO., LTD, Ordos, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
Provided is an amorphous silicon thin-film transistor including an amorphous silicon semiconductor layer, a source electrode, and a drain electrode that are successively disposed on a base substrate. Ions doped by an ion implantation process are present in a region, proximal to the source electrode and the drain electrode, of the amorphous silicon semiconductor layer. A concentration of the ions in a surface region, proximal to the source electrode and the drain electrode, of the amorphous silicon semiconductor layer is greater than or equal to 5*10{circumflex over ( )}20 atoms/cc.