The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Aug. 11, 2022
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Katsumi Eikyu, Tokyo, JP;

Yuta Nabuchi, Tokyo, JP;

Atsushi Sakai, Tokyo, JP;

Akihiro Shimomura, Tokyo, JP;

Satoru Tokuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 30/0293 (2025.01); H10D 30/0295 (2025.01); H10D 30/0297 (2025.01); H10D 62/127 (2025.01); H10D 64/513 (2025.01); H10D 62/115 (2025.01);
Abstract

A semiconductor device includes a plurality of unit cells. Each of the plurality of unit cells has a pair of column regions, a pair of trenches formed between the pair of column regions in the X direction, and a pair of gate electrodes formed in the pair of trenches via a gate insulating film, respectively. The two unit cells adjacent in the X direction share one column region of the pair of column regions and are arranged to be symmetrical about the shared column region. Here, a distance between the two trenches, which are adjacent with the one column region interposed therebetween, of the trenches in the two adjacent unit cells is different from a distance between the pair of trenches in the one unit cell.


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