The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Apr. 08, 2022
Applicants:

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno, 's-Gravenhage, NL;

Technische Universiteit Delft, Delft, NL;

Inventors:

Nodar Samkharadze, Delft, NL;

Guoji Zheng, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); B82Y 10/00 (2011.01); H10D 30/01 (2025.01); H10D 48/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/83 (2025.01); H10D 64/20 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/473 (2025.01); H10D 30/014 (2025.01); H10D 48/383 (2025.01); H10D 48/3835 (2025.01); H10D 62/126 (2025.01); H10D 62/13 (2025.01); H10D 62/83 (2025.01); H10D 64/205 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); B82Y 10/00 (2013.01);
Abstract

A quantum device is described that includes a substrate with a layered structure, e.g. heterostructure, forming a quantum well layer. A doped region is connected to the layered structure for exchanging charge carriers with the quantum well layer. A patterned layer of electrically conductive material forms a set of gates including an accumulation gate. The accumulation gate comprises an accumulation pad configured to accumulate a two-dimensional charge carrier gas (2DCCG) in an active region of the quantum well layer connected there below to the doped region. At least part of an electric pathway between the accumulation pad and a connection pad is narrowed to form a nanoscale constriction for cutting off the active region of the quantum well layer.


Find Patent Forward Citations

Samkharadze, Nodar. (2026). Accumulation gate for quantum device (U.S. Patent No. 12610575). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610575

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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