The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Feb. 16, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyung Bin Chun, Suwon-si, KR;

Jin Bum Kim, Suwon-si, KR;

Dong Suk Shin, Suwon-si, KR;

Gyeom Kim, Suwon-si, KR;

Da Hye Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 62/151 (2025.01);
Abstract

A semiconductor device includes a lower pattern on a substrate and protruding in a first direction, a source/drain pattern on the lower pattern and including a semiconductor liner film in contact with the lower pattern, and an epitaxial insulating liner extending along at least a portion of a sidewall of the semiconductor liner film, wherein the epitaxial insulating liner is in contact with the semiconductor liner film, wherein the semiconductor liner film includes a first portion, wherein the first portion of the semiconductor liner film includes a first point spaced apart from the lower pattern at a first height, and a second point spaced apart from the lower pattern at a second height, wherein the second height is greater than the first height, wherein a width of the semiconductor liner film in a second direction at the first point is less than a width of the semiconductor liner film in the second direction at the second point, and wherein the epitaxial insulating liner extends along at least a portion of a sidewall of the first portion of the semiconductor liner film.


Find Patent Forward Citations

Chun, Kyung. (2026). Semiconductor device and method for manufacturing the same (U.S. Patent No. 12610574). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610574

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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