The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

May. 04, 2023
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Xiaodong Wang, Shanghai, CN;

Fei Tang, Shanghai, CN;

Weihong Qian, Shanghai, CN;

Xining Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/20 (2025.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H10D 1/20 (2025.01);
Abstract

A semiconductor structure includes a substrate. The substrate includes a shielding region and a device region. The shielding region includes a first active region parallel to a first direction. The device region includes a second active region parallel to the first direction. The semiconductor structure also includes first isolation structures located on the shielding region. The first isolation structures run through the first active region along the second direction. The semiconductor structure also includes first gate structures located on the device region. The first gate structures cross the second active region along the second direction. The semiconductor structure also includes a second isolation structure located on the device region. The second isolation structure runs through the second active region along the second direction. The semiconductor structure also includes a dielectric layer on the substrate and an inductance coil on the dielectric layer.


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