The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Aug. 29, 2022
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Qichang An, Beijing, CN;
Yuelei Xiao, Beijing, CN;
Yue Li, Beijing, CN;
Yifan Wu, Beijing, CN;
Yulin Feng, Beijing, CN;
Huiying Li, Beijing, CN;
Xue Cao, Beijing, CN;
Qiuxu Wei, Beijing, CN;
Lihui Wang, Beijing, CN;
Yanfei Ren, Beijing, CN;
Wenbo Chang, Beijing, CN;
Kidong Han, Beijing, CN;
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A filter, a method for manufacturing a filter and an electronic apparatus are provided, and belongs to the field of passive device technology. The filter includes a dielectric substrate, and at least one inductor and at least one capacitor integrated thereon. The dielectric substrate includes first connection vias penetrating through the dielectric substrate in a thickness direction thereof, and opposite first and second surfaces in the thickness direction. Each inductor includes first and second conductive structures respectively on the first and second surfaces, and first connection electrodes in the first connection vias. The first conductive structures and the second conductive structures form a coil structure of the inductor by the first connection electrodes. A buffer layer is provided between the first conductive structures and the first surface. Each first conductive structure is electrically connected to the first connection electrode by a second connection via penetrating through the buffer layer.