Integrated optoelectronic device with optical interconnect structure for improved beol device integration

Abstract

An integrated optoelectronic device comprises a substrate with a silicon layer comprising one or more electronic components. An interconnect stack comprising a plurality of metal levels is arranged on the substrate. A front-end-of-line (FEOL) optical waveguide on the substrate has an optical FEOL coupling section. A photonic component is arranged in the interconnect stack at a distance from the substrate. A back-end-of-line (BEOL) optical waveguide in the interconnect stack is optically coupled to the photonic component and has an optical BEOL coupling section. An optical interconnect structure is configured for optically coupling radiation from the BEOL coupling section into the FEOL coupling section and vice versa. The optical interconnect structure comprises a stack of wave-guide elements made of a first dielectric material, which each are embedded in a second dielectric material and which in a desired wavelength range have an index of refraction higher than the second dielectric material.