The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Aug. 26, 2024
Applicant:
Nanya Technology Corporation, New Taipei City, TW;
Inventors:
Chih-Jen Chen, New Taipei City, TW;
Ting-Shuo Hsu, New Taipei City, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 29/12 (2006.01); G11C 5/02 (2006.01); G11C 5/04 (2006.01); G11C 8/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12005 (2013.01); G11C 29/1201 (2013.01); G11C 5/02 (2013.01); G11C 5/025 (2013.01); G11C 5/04 (2013.01); G11C 8/12 (2013.01);
Abstract
A memory device and an internal voltage measuring method thereof are provided. Output pads of a master memory chip and a slave memory chip are coupled. When one of a switching circuit of the master memory chip and a switching circuit of the slave memory chip is turned on, the other of the switching circuit of the master memory chip and the switching circuit of the slave memory chip is turned off.
Chen, Chih-Jen. (2026). Memory device and internal voltage measuring method thereof (U.S. Patent No. 12609177). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12609177
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile