The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jun. 13, 2024
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Hsiung Hung, Hsin-Chu, TW;

Hsin-Yi Ho, Hsinchu City, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/08 (2013.01); G11C 16/32 (2013.01);
Abstract

A data accessing method of a memory device includes the following steps. During a first time period, a read voltage is applied to a first read selected word line in a first memory cell block. During a first data reading time period in the first time period, at least one first memory cell string in the first memory cell block is activated. During a second time period, the read voltage is applied to a second read selected word line in a second memory cell block. The first time period partially overlaps the second time period. During a second data reading time period in the second time period, at least one second memory cell string in the second memory cell block is activated. The first data reading time period does not overlap the second data reading time period.


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