The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jan. 18, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eun Chu Oh, Hwaseong-si, KR;
Byungchul Jang, Suwon-si, KR;
Junyeong Seok, Suwon-si, KR;
Younggul Song, Suwon-si, KR;
Joonsung Lim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A nonvolatile memory (NVM) device includes a plurality of memory blocks and a control logic receiving a specific command and an address. The control logic may perform a cell count-based dynamic read (CDR) operation on memory cells connected to one of wordlines of a selected block, among the plurality of memory blocks, in response to the address. The control logic includes a cell count comparator circuit configured to compare: (1) a first cell count value for a highest state among a plurality of states with at least one reference value according to the CDR operation and (2) a second cell count value for an erase state among the plurality of states with the at least one reference value. Additionally, the control logic includes a read level selector configured to select a read level according to a result of the comparison of the cell count comparator circuit.