The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Aug. 04, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Yanwei He, Fremont, CA (US);

Henry Chin, San Jose, CA (US);

Shota Murai, Fujisawa, JP;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory device includes a memory block including a plurality of memory cells and control circuitry configured to perform a dummy read operation to transition memory cells of the memory block from a first read condition to a second read condition. To perform the dummy read operation, the control circuitry is configured to, subsequent to performing a programming operation on a selected word line and prior to performing a programming operation on a next word line, supply a first voltage pulse to bias the selected word line and previously programmed word lines in the memory block, and, while supplying the first voltage pulse, supply a second voltage pulse to bias unprogrammed word lines in the memory block including the next word line. The second voltage pulse has a lower magnitude than the first voltage pulse.


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