The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
May. 09, 2024
Macronix International Co., Ltd., Hsinchu, TW;
Hsien-Hung Wu, Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A voltage generation circuit for high performance and high capacity three-dimensional (3D) NAND memory that receives an input control current and outputs a VREF is provided. The voltage generation circuit includes a first circuit including first and second transistors connected in series between a first node receiving the input control current and a supply node, a second circuit including first and second resistors connected in series between the first node and the supply node, wherein the input control current is divided between the first and second circuits, reference node outputs VREF and is connected to the first transistor, a second node located between the first resistor and the second resistor and in electrical communication with the second transistor, and a current supply circuit connected to the second node and providing a compensation current that influences VREF to account for changes in operating temperatures.