The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Oct. 23, 2023
Applicant:

Hewlett Packard Enterprise Development Lp, Spring, TX (US);

Inventors:

Stanley Cheung, Milpitas, CA (US);

Bassem Tossoun, Santa Barbara, CA (US);

Yuan Yuan, Milpitas, CA (US);

Yiwei Peng, Spring, TX (US);

Geza Kurczveil, Santa Barbara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/015 (2006.01); G02F 1/21 (2006.01); G02F 1/225 (2006.01);
U.S. Cl.
CPC ...
G02F 1/0155 (2021.01); G02F 1/212 (2021.01); G02F 1/2257 (2013.01); G02F 2203/50 (2013.01);
Abstract

Systems and methods are provided for optical devices with integrated memristor behavior adapted for non-volatile retention of phase tuning. Examples include an optical filter having a first waveguide formed on a substrate and a phase shift mechanism coupled to the first waveguide. The phase shift mechanism comprises a semiconductor material layer bonded the first waveguide, and a filamentation layer formed between the first waveguide and the semiconductor material based on applying an electric field to the phase shift mechanism. The filamentation layer causes a non-volatile change in a refractive index of the first waveguide, that provides for phase detuning.


Find Patent Forward Citations

Loading…