The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jul. 15, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Julio Brandelero, Rennes Cedex, FR;
Pierre-Yves Pichon, Rennes Cedex, FR;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method for measuring degradation of a thermal resistance between a power semiconductor and a heat sink of a power module assembly where the power semiconductor has an internal gate resistance, including measuring a first initial parameter related to the power semiconductor junction temperature, and heating the internal gate resistance and measuring a second initial parameter, related to the junction temperature after the heating, after discrete time intervals during the lifetime of the power module assembly measuring a first subsequent parameter related to the power semiconductor junction temperature heating the internal gate resistance and measuring a second subsequent parameter, related to the junction temperature after the heating, and calculating a thermal resistance degradation, ΔRwith the subsequent parameters related to junction temperature and the initial parameters and raising a fault flag in case ΔRis above a limit value.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile