The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
May. 27, 2022
Fuzhou University, Fuzhou City, CN;
Lingyun Li, Fuzhou City, CN;
Yi Shi, Fuzhou City, CN;
Fazheng Huang, Fuzhou City, CN;
Ziwei Zhou, Fuzhou City, CN;
Xinxu Li, Fuzhou City, CN;
Yan Yu, Fuzhou City, CN;
FUZHOU UNIVERSITY, Fuzhou City, CN;
Abstract
The present disclosure provides a growth method of a high-temperature phase lanthanum borosilicate crystal, where the high-temperature phase lanthanum borosilicate crystal is a β-LaLnBSiOcrystal prepared by a high-temperature flux method; a composite flux system is (LaLn)BO—LiMoO—SiO—BO, and (LaLn)BO, LiMoO, SiO, and BOin the system have molar percentages of x, x, x, and x, respectively; 0<x<0.3, 0.7≤x<1, 0<x<0.3, x+x+x=1, x:x=2:1 to 4:1. In the present disclosure, a difficulty is overcome in the crystal growth of β-LaBSiOdue to phase transition. The crystal is an optical function material that does not undergo the phase transition during annealing and can exist stably at room temperature. The crystal is widely used in laser, terahertz, and other fields.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile