The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Apr. 17, 2024
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Jerome Geoffrey Magnant, Rexford, NY (US);

Daniel Gene Dunn, Guilderland, NY (US);

Jared Hogg Weaver, Clifton Park, NY (US);

Paul Edward Gray, North East, MD (US);

Gregory Allen Willis, Middletown, OH (US);

Daniel P. Ivkovich, Fairfield, OH (US);

Assignee:

General Electric Company, Evendale, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 41/85 (2006.01); B29C 73/02 (2006.01); C04B 41/45 (2006.01); C04B 41/50 (2006.01);
U.S. Cl.
CPC ...
C04B 41/457 (2013.01); B29C 73/025 (2013.01); C04B 41/5006 (2013.01); C04B 41/5096 (2013.01); C04B 2235/428 (2013.01); C04B 2235/616 (2013.01);
Abstract

A method for limiting void formation in a melt-infiltrated ceramic matrix composite (MI-CMC) component includes arranging one or more infiltrant feedstocks in fluid communication with a targeted area of the MI-CMC component. The one or more infiltrant feedstocks have a nominal melting point at or below a nominal melting point of an alloy within the MI-CMC component. The method includes heating the one or more infiltrant feedstocks to a first temperature at or above the nominal melting point of the one or more infiltrant feedstocks to form a molten phase. The method also includes infiltrating the targeted area of the MI-CMC component with the molten phase. As such, the molten phase reacts with a solid phase in the targeted area of the MI-CMC component. Further, the method includes cooling the MI-CMC component to a second temperature that is below the first temperature to solidify the molten phase.


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