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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12604724 B1

PDFFull Text
Date of Patent:
Apr. 14, 2026

Filed:

May. 05, 2023

Vertical semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeho Kim, Suwon-si, KR;

Woosung Yang, Suwon-si, KR;

Jimo Gu, Suwon-si, KR;

Sukkang Sung, Suwon-si, KR;

Ahreum Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Morgan, Lewis & Bockius LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Paul A Berry

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 25/0652 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 80/00 (2023.02);
Abstract

A vertical semiconductor device includes lower circuit patterns disposed on a first substrate. A bonding layer is disposed on the lower circuit patterns. A wire is disposed on the bonding layer. A cell stack structure is disposed on the wire. A base pattern is disposed on the cell stack structure. An upper insulating layer is disposed on the base pattern. A cell contact plug passes through the cell stack structure and extends to the upper insulating layer. A through-plug is disposed inside a through-hole formed through an outer side of the base pattern to extend to the upper insulating layer. Each of the cell contact plug and the through-plug includes a barrier metal pattern and a metal pattern, and the barrier metal pattern is disposed along sidewalls and bottom surfaces of the cell contact hole and the through-hole.

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