The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Feb. 15, 2023
Applicants:

SK Hynix Inc., Icheon, KR;

Incheon National University Research & Business Foundation, Incheon, KR;

Inventors:

Do Han Lee, Icheon, KR;

Eun Soo Kim, Icheon, KR;

Seung Wook Ryu, Icheon, KR;

Sung Hwan Jo, Icheon, KR;

Han-Bo-Ram Lee, Incheon, KR;

Abu Saad Aqueel Ahmad Ansari, Incheon, KR;

Ngoc Le Trinh, Incheon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H10B 69/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/02 (2013.01); C23C 16/45525 (2013.01); H01J 37/32394 (2013.01); H01J 37/32816 (2013.01); H10B 69/00 (2023.02); H01J 2237/332 (2013.01);
Abstract

A thin film deposition method may include preparing a substrate structure having an opening region formed in a vertical direction and a plurality of holes formed in a horizontal direction in each of two side portions exposed by the opening region, and adsorbing an inhibitor to surfaces of the substrate structure so that an adsorption density of the inhibitor outside of the plurality of holes is higher than an adsorption density inside of the plurality of holes by adsorbing the inhibitor in a deposition environment in which a gas diffusivity is larger in the vertical direction than in the horizontal direction. A deposition process of a material film on the inside and outside of the plurality of holes is then performed, wherein a deposition rate of the material film may vary according to the adsorption density of the inhibitor.


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