The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Oct. 25, 2023
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Koji Matsumoto, Tokyo, JP;
Toshiaki Ono, Tokyo, JP;
Hiroshi Amano, Aichi, JP;
Yoshio Honda, Aichi, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 36/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/2905 (2026.01); H10P 14/24 (2026.01); H10P 14/2926 (2026.01); H10P 14/3216 (2026.01); H10P 14/3248 (2026.01); H10P 14/3251 (2026.01); H10P 14/3416 (2026.01); H10P 36/03 (2026.01); H10P 14/38 (2026.01);
Abstract
A method for manufacturing a group III nitride semiconductor substrate, that includes: growing a first AlN buffer layer on an Si substrate at a first growth temperature; growing a second AlN buffer layer on the first AlN buffer layer at a second growth temperature higher than the first growth temperature; and growing a group III nitride semiconductor layer on the second AlN buffer layer, wherein an Al raw material and an N raw material are alternately repeatedly fed in the growing the first AlN buffer layer.