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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12604571 B1

PDFFull Text
Date of Patent:
Apr. 14, 2026

Filed:

Oct. 04, 2022

Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Saket Chadda, San Jose, CA (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Davienne N Monbleau

Assistant Examiner:

Emily undefined Farmer

Int. Cl.
CPC ...
H10H 20/84 (2025.01); H10H 20/01 (2025.01); H10H 20/821 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/841 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/84 (2025.01); H10H 20/0133 (2025.01); H10H 20/01335 (2025.01); H10H 20/821 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/841 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01); H10H 20/0364 (2025.01);
Abstract

A light emitting diode includes a mesa structure containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, and a second-conductivity-type compound semiconductor layer, and a passivation material layer contacting at least a sidewall of the mesa structure. The passivation material layer has a first crystal structure that matches a second crystal structure of the first-conductivity-type compound semiconductor layer and the second-conductivity-type compound semiconductor layer.

Find Patent Forward Citations

Chadda, Saket. (2026). Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof (U.S. Patent No. 12604571). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12604571

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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