The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

May. 27, 2022
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chao-Hsing Chen, Hsinchu, TW;

Yi-Hung Lin, Hsinchu, TW;

Kuo-Ching Hung, Hsinchu, TW;

Chi-Shiang Hsu, Hsinchu, TW;

Assignee:

Ennostar Corporation, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H01L 25/075 (2006.01); H10H 20/821 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/832 (2025.01); H10H 20/833 (2025.01); H10H 20/84 (2025.01); H10H 20/857 (2025.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/821 (2025.01); H10H 20/84 (2025.01); H01L 24/05 (2013.01); H01L 25/0753 (2013.01); H01L 2224/05109 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05684 (2013.01); H01L 2924/0132 (2013.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/835 (2025.01); H10H 20/857 (2025.01);
Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.


Find Patent Forward Citations

Loading…