The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Dec. 01, 2021
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventor:

Chung Hoon Lee, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 20/851 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H01L 25/0753 (2013.01); H01L 25/0756 (2013.01); H10H 20/018 (2025.01); H10H 20/821 (2025.01); H10H 20/8312 (2025.01); H10H 20/8515 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01); H10H 20/825 (2025.01); H10H 20/8512 (2025.01);
Abstract

A light emitting device including a first semiconductor stacked structure configured to emit multi-color light, and a red light source configured to emit red light, in which the first semiconductor stacked structure includes a first conductivity-type nitride semiconductor layer, an active layer disposed on the first conductivity-type nitride semiconductor layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer, the active layer has a multi-quantum well structure including a plurality of barrier layers and a plurality of well layers stacked one over another, and the active layer is configured to emit multi-color light.


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