Semiconductor device with active portions of varied widths inside active pattern

Abstract

The present disclosure relates to semiconductor devices. One example semiconductor device comprises a substrate that includes a first active pattern, a first source/drain pattern, a second source/drain pattern, and a third source/drain pattern on the first active patter, a first separation structure between the first source/drain pattern and the second source/drain pattern, and a second separation structure between the second source/drain pattern and the third source/drain pattern. The first active pattern includes a first active portion that overlaps the first source/drain pattern, a second active portion that overlaps the second source/drain pattern, a third active portion that overlaps the third source/drain pattern, a first intervening portion between the first active portion and the second active portion, and a second intervening portion between the second active portion and the third active portion.