The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Oct. 19, 2022
Applicant:
Hrl Laboratories, Llc, Malibu, CA (US);
Inventors:
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 48/36 (2025.01); H01L 21/02 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 48/362 (2025.01); H01L 21/02381 (2013.01); H01L 21/02387 (2013.01); H01L 21/024 (2013.01); H01L 21/02568 (2013.01); H10D 30/6739 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 99/00 (2025.01);
Abstract
A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.