The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Oct. 25, 2022
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Kun Young Lee, Icheon-si Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/10 (2023.01); G11C 16/04 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract
There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device may include a stack structure including a plurality of conductive layers, a hole formed in the stack structure, a memory layer allowing a first part and a second part of the hole to be spaced apart from each other in the hole, and a first channel layer disposed in the first part of the hole and a second channel layer disposed in the second part of the hole.