The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Dec. 22, 2021
Applicant:

Sunrise Memory Corporation, San Jose, CA (US);

Inventors:

Vinod Purayath, Sedona, AZ (US);

Kenta Ohama, Tokyo, JP;

Yosuke Nosho, Tokyo, JP;

Assignee:

SUNRISE MEMORY CORPORATION, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/20 (2023.02); H10B 43/40 (2023.02);
Abstract

A VNOR memory string includes: (a) first and second pillars embedded in multiple composite layers, each composite layer comprising an insulator layer and a conductor layer, the first and second pillars each comprising a first semiconductor material of a first conductivity; (b) a second semiconductor layer of a second conductivity type opposite the first conductivity type on the outside of third pillar also embedded in the composite layers, the third pillar contacting both the first and second pillars; and (c) a storage layer provided between the second semiconductor layer and each of the conductor layer in the composite layers.


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