The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Aug. 24, 2022
Nanya Technology Corporation, New Taipei City, TW;
Chiang-Lin Shih, New Taipei City, TW;
Yu-Ting Lin, New Taipei City, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Abstract
A semiconductor structure includes a first dielectric layer, a second dielectric layer on the first dielectric layer, a capacitor structure in the first dielectric layer and the second dielectric layer, a third dielectric layer on the second dielectric layer, a word line, a channel structure, and a gate dielectric. The word line is located in the third dielectric layer and extends across the capacitor structure. The channel structure is located in the third dielectric layer and surrounds the word line and a portion of the third dielectric layer. The gate dielectric has a first portion and a second portion separated from the first portion, wherein the first portion is between a sidewall of the word line and the channel structure, and the second portion is between an inner sidewall of the third dielectric layer and the channel structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile