The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Aug. 21, 2022
Applicant:
Nanya Technology Corporation, New Taipei City, TW;
Inventors:
Chiang-Lin Shih, New Taipei City, TW;
Yu-Ting Lin, New Taipei City, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/318 (2023.02); H10B 12/50 (2023.02);
Abstract
A dynamic random access memory includes an array region, a bottom capacitor array located in the array region, and a top capacitor array located in the array region and located on the bottom capacitor array. The bottom capacitor array is single-sided capacitor array. The top capacitor is a double-sided capacitor array.
Shih, Chiang-Lin. (2026). Dynamic random access memory (U.S. Patent No. 12604461). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12604461
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile