The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Nov. 07, 2024
Applicant:

National Sun Yat-sen University, Kaohsiung, TW;

Inventors:

Chua-Chin Wang, Kaohsiung, TW;

Oliver Lexter July A. Jose, Kaohsiung, TW;

Venkata Naveen Kolakaluri, Kaohsiung, TW;

Jui-Min Kuo, Kaohsiung, TW;

Ming-Chi Chou, Kaohsiung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H03K 3/037 (2006.01); H03K 19/003 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0013 (2013.01); H03K 3/0377 (2013.01); H03K 19/00315 (2013.01); H03K 19/00323 (2013.01); H03K 19/018521 (2013.01);
Abstract

An active gate driver provided to drive a power transistor includes a two-level Miller plateau detector, a cycle shifter, a flexible split-path feedback circuit, a PMOS switch picker, a NMOS switch picker, a PMOS buffer array and a NMOS buffer array. The active gate driver turns off some PMOS transistors of the PMOS buffer array and some NMOS transistors of the NMOS buffer array to lower power consumption when the power transistor in the Miller plateau. And the active gate driver also turns off some PMOS transistors of the PMOS buffer array if a gate-source voltage is greater than a high-potential reference voltage, thereby further reducing power consumption.


Find Patent Forward Citations

Loading…